Research Activities The ElmicLab is part of Physics Department in Aristotle University of Thessaloniki.  Various facilities are available including XRD and TEM for structure characterization together with magnetic, magneto-optic and magnetotransport for magnetic-origin experiments. The group’s effectiveness is reinforced by the fruitful and joint work of academic staff members, post-doc researchers and pre-doc students. The ElmicLab staff members have broad experience in sample preparation and are in position to parametrize the preparation conditions in order to modulate sample characteristics. Additionally ElmicLab is effective in detailful analysis on structure characterization, which is crucial for such systems as it may be seen in the following research areas Electron Microscopy Laboratory - Department of Physics AUTh Low-misfit and multilayered heterostructures a) Cross-section HRTEM micrograph of the ZnSe/GaAs (111)  heterostructure viewed along [10]  axes of the two lattices, which are  oriented parallel to the electron  beam. The horizontal line indicates the sharp ZnSe/GaAs interface, SF denotes stacking faults b) Magnified view of the area  marked by the box in Fig. (a). An interfacial step with height equal to one (111) d-spacing of GaAs is depicted by the inclined line c) Magnified view of the area A in the upper part of Fig. (a) is shown. d) Processed image generated by averaging the two mirror related images of ZnSe shown in (e) and (f) a) Weak-Beam (g/5g) cross-section TEM micrograph showing c type threading dislocations (TDs) in a multilayered GaN/AlN film forming half-loops with increasing GaN epilayer thickness.b) HRTEM image, viewed along the [110] zone axis, illustrating the bending of TDs onto the successive GaN/AlN-IL/GaN interfaces, while they continue to propagate towards the surface. c) Fourier filtered image of (b), where extra half AlN-IL planes are depicted revealing the local appearance of misfit dislocation segments in the interfaces. The two opposite misfit segments in the same {100} plane indicate the position of a half-loop p-n GaN junctions a) HRTEM micrograph showing the p-GaN epilayer of a p-n GaN junction containing prismatic inversion domain boundaries (IDBs) that emanate from the p-n interface and Mg-rich clusters. b)  HRTEM image from a part of the p-n interface; cubic Mg-rich  islands identified as basal IDBs are confined at the p-n interface, leading the dominant polarity of the p-region to be inverted with respect to the n-region. The corresponding simulated image is given as inset (thickness 3.2 nm, defocus -66 nm). c) The supercell employed for HRTEM image calculations Thin film ohmic contacts Magnetic thin films and nanoparticles Cross-section TEM image of a TiN ohmic contact on n-type GaN depicting the as-deposited TiN with the <110> zone axis of GaN being parallel to the  electron beam is shown. A columnar mode of growth is observed for TiN on the top of strained GaN; the inset shows the corresponding diffraction pattern, where an fcc cubic polycrystalline and twinned TiN structure is revealed Regular growth of magnetic multilayered systems with excellent modulation sequence Research of novel materials with desirable technological features Systematic Study and Parametrisation of physical properties HRTEM micrograph of two nanoparticles of AgCo45  colloidal solution dried on a C microscope grid. The larger one comprises Ag as the core of the particle and h.c.p. Co as a partial shell around the core, whereas the small one is a single-crystalline h.c.p. Co HRTEM image a [La0.67Ca0.33MnO3  (ferromagnetic-FM) / La0.33Ca0.67MnO3  (antiferomagnetic-AF)]15 multilayer, grown on LaAlO3 substrate over an AF buffer layer is shown. Schematic representation (top) and X-ray micrograph (experiment & theory) of Pt-Ni multilayer TEM planar (top) and cross-section (bottom) view of Pd-CoPd multilayer indicative of excellent modulation growth AFM images of lithographically treated substrates for multilayer growth of micromagnetic  patterns Atomic-scale magnetic profile in Pt-Ni multilayers GMR response leading to sensor fabrication on Ag-Co system Micro- and nanostructural characterization of novel semiconductors Formation of thin 3C-SiC twin inclusions on a twin boundary Al stripe between two 15R-SiC areas showing the change of the (0001) direction in 15R-SiC Transition zone between 6H and 21R-SiC polytypes 72R-SiC polytype. The stacking sequence  determined by HRTEM is [(33)2(34)(32)]3 3C-SiC/4H-SiC interface HRΤΕΜ image showing two different twin orientations in Pd structure Twin interface Twinning modelling from a HRTEM image of Pd structure HRTEM imaging of ZnO nanopillars grown on Si Heteroepitaxial growth of nanostructures HRTEM imaging of ZnO thin film grown on 4H-SiC IFFT reconstruction of a γ-Fe2O3 nanoparticle Thermoelectric materials HRTEM image showing the different phases and orientationsof AgPb18SbSe20  HRTEM image of AgPb18SbSe20 (insets: corresponding simulated images)